Investigation of slip transmission behavior across grain boundaries in polycrystalline Ni3Al using nanoindentation
نویسندگان
چکیده
منابع مشابه
Tem Investigation of Grain Boundaries in Polycrystalline Silicon
The structure of two near-coincidence boundaries (close to a I = 7 and a Z = 9 misorientation) occurring in commercial poly-silicon has been examined in TEM. Both the structure of secondary dislocation networks as well as the occurrence of a-fringes (indicating a relative translation of the crystals along the boundary) were investigated. The near Z = 7 boundary is found to contain a simple netw...
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Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and scattering of charge carriers at grain boundaries (GBs) could degrade its performance relative to exfoliated, single-crystal graphene. However, the electrical properties of GBs have so far been addressed indirectly without simultaneous knowledge of their locations and structures. We present electrical measurements on i...
متن کاملCritical assessment of hydrogen effects on the slip transmission across grain boundaries in α -Fe.
Grain boundaries (GBs) play a fundamental role in the strengthening mechanism of crystalline structures by acting as an impediment to dislocation motion. However, the presence of an aggressive environment such as hydrogen increases the susceptibility to intergranular fracture. Further, there is a lack of systematic investigations exploring the role of hydrogen on the dislocation-grain-boundary ...
متن کاملEnergy of slip transmission and nucleation at grain boundaries
Grain boundaries (GBs) provide a strengthening mechanism in engineering materials by impeding dislocation motion. In a polycrystalline material, there is a wide distribution of GB types with characteristic slip transmission and nucleation behaviors. Slip–GB reactions are not easy to establish analytically or from experiments; furthermore, there is a strong need to quantify the energy barriers o...
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ژورنال
عنوان ژورنال: Journal of Materials Research
سال: 2004
ISSN: 0884-2914,2044-5326
DOI: 10.1557/jmr.2004.19.1.189